April 20 (5pm - 9pm): Welcome reception

Location: Eindhoven University of Technology

5.00 - 5.30pm Welcome & Drinks
5.30 - 7.00pm Lab tour
7.00 - 9.00pm Dinner & Drinks

April 21 (8am - 9pm): Scientific program

Location: Pullman Hotel Cocagne, Eindhoven

The complete scientific program, including the abstracts, can be found here.

8.00 - 9.00 Registration & coffee
9.00 - 9.10 Welcome Adrie Mackus Eindhoven University of Technology
9:10 - 9:50 New strategies for area selective deposition Stacey F. Bent Stanford University
9.50 - 10.30 Perfectly selective thin film CVD using inhibitor molecules John R. Abelson University of Illinois at Urbana-Champaign
10:30 - 11.00 Break & posters
11.00 - 11.40 Insight in nucleation mechanisms of semiconducting 2D metal sulfides and application to area selective deposition Annelies Delabie IMEC, KU Leuven
11.40 - 12.20 Design and synthesis of catalytic nanoparticles via area selective atomic layer deposition Rong Chen Huazhong University
12.20 - 13.00 Understanding selectivity in thermal atomic layer etching using sequential, self-limiting fluorination and ligand-exchange reactions Younghee Lee University of Colorado at Boulder
13.00 - 14.15 Lunch & poster session
14.15 - 14.35 Advanced process technologies for sub-10 nm patterning Gert Leusink TEL Technology Center
14.35 - 14.50 Effects of hydroxyl density and metal oxide composition on inherent substrate selective ALD of tungsten Paul C. Lemaire North Carolina State University
14.50 - 15.05 Area-selective ALD of silicon oxide using acetylacetone as inhibitor in a three-step cycle Alfredo Mameli Eindhoven University of Technology
15.05 - 15.20 Investigating the difference in nucleation of silicon-based materials Si, Si3N4, SiO2 and C-doped SiO2 during PECVD/PEALD for future selective area deposition (S-ALD) Ekaterina A. Filatova Tyndall National Institute
15.20 - 15.45 Break
15.45 - 16.05 Selective CVD metal deposition for nano device fabrication Son Van Nguyen IBM Semiconductor Research
16.05 - 16.20 Area selective Ru ALD for sub 7 nm bottom-up metal interconnects Ivan Zyulkov KU Leuven, IMEC
16.20 - 16.35 Area selective deposition of metal films John G. Ekerdt University of Texas at Austin
16.35 - 16.55 Selective deposition: a materials supplier’s perspective Jean-Marc Girard Air Liquide Advanced Materials
16.55 - 17.20 Break
17.20 - 17.40 Strategies for area selective atomic layer deposition Jan Willem Maes ASM Belgium
17.40 - 17.55 Selective deposition using the inherent substrate-dependent growth initiation based on nucleation delay and on the joint use of plasma etching mode Remy Gassillouda CEA, LETI
17.55 - 18.15 Applications of area selective deposition David Thompson Applied Materials
18.15 - 19.00 Discussion session: Moderators: Gregory Parsons, Adrie Mackus
19.00 - 21.00 Drinks & snacks

Legend

Invited academia Invited Industry Contributed